Single Crystal Silicon Dioxide Wafer P-Type
Product Name: Single Crystal Silicon Dioxide Wafer P-Type
Product Name |
Single Crystal Silicon Dioxide Wafer P-Type |
Cat. No. |
NCZ-NSC 319/20
|
Diameter |
100 mm +-0.2 mm (4″)
|
Oxide Thickness |
300 ±20 nm (dry)
|
Color |
Violet
|
Thickness |
500 ± 20 micron |
Resistivity |
1-10 ohm-cm |
Type/Dopant |
P |
Orientation |
<100> |
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) Description
Single Crystal Silicon Dioxide Wafer P-Type Nanochemazone® produces Silicon Oxide Wafer with the highest possible density. Our standard wafer size is nominally 25.4 mm (1 inch) to 300 mm (11.8 inches). Materials are produced using crystallization, solid-state, and other ultra-high purification processes such as sublimation.
This process forms a cylindrical ingot which is then sliced and polished to form wafers. Nanochemazone® High Purity (99.999%) Silicon Oxide Wafers- Polished & Unpolished specializes in producing custom compositions for commercial and research applications and new proprietary technologies.
Nanochemazone® also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Silicon as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.
Single Crystal Silicon Dioxide Wafer P-Type (4 inches) RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light, and keep dry at room temperature.
Please email us for the customization.
Email:
contact@nanochemazone.com
Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.
Reviews
There are no reviews yet.