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CAS No.: 7782-42-5 (graphene), 7440-02-0 (nickel)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| Product Name |
3D Graphene on Nickel/Copper Foam |
| Stock No. | NCZ-GSW-0022 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
| Product Name |
3D Freestanding Graphene Foam |
| Stock No. | NCZ-GSW-0023 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| Product Number | NCZC3003 |
| CAS Number | 7440-40-0 |
| Concentration | 1mg/mL to 20 mg/mL (in stock), Concentration Customization is Possible |
| Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization is Possible |
| APS | 5-10 nm (Customization is Possible) |
| Package Size | 1-100 mL (Customization is Possible) |
| Composition: |
Carboxylated Graphene Quantum Dots |
| Appearance: | Colorless solution |
| PL peak: | 480 nm (reference only, the actual value may vary) |
| Particle Size: | ＜10 nm |
| Concentration: | 1 mg/ml (available up to 20 mg/ml) |
| Solution: | Water, Toluene (customization possible) |
| Purity: | >99.9% |
| Product Name |
CVD Graphene on PET Substrate |
| Stock No. | NCZ-GSW-0019 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| MF: | C |
| Chemical Name: |
Graphene and CNT Paste |
| Purity: | ≥99.5% |
| Diameter | GNP 5-7 μm, CNT Outside Diameter: 50-80 nm, Inside Diameter: 5-15 nm (Customization possible) |
| Length | 10-20 μm (Customization possible) |
| Number of Layers: | <30 (Customization possible) |
| Color | Black |
| Form: | Dispersion/Paste/Solution |
| Product Number: | #NCZC1011 |
| CAS Number | 7782-42-5 |
| Solvent | NMP, DMF, DMSO, Acetonitrile, etc. |
| MF | C |
| Chemical Name |
Graphene Nanoplatelets |
| Purity | ≥99.5% |
| Diameter | 5-10 µm |
| Thickness | 4-20 nm |
| Number of Layers | <30 (Customization possible) |
| Color | Black |
| Form | Dispersion/Paste/Solution/Powder |
| Product Number | NCZC1007 |
| CAS Number | 7782-42-5 |
| Product Name | Graphene On Lacey Carbon 300 Mesh Copper TEM Grids |
| Stock No. | NCZ-GSW-0015 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | ~0.35 nm | ~96.4% | 300 Mesh Copper Grid | N/A |
| 2 Layers | ~0.7 nm | ~92.7% | 300 Mesh Copper Grid | N/A |
| 3-5 Layers | 1.0-1.7 nm | ~85.8-90.4% | 300 Mesh Copper Grid | N/A |
| 6-8 Layers | 2.1-2.8 nm | ~78.5-83.2% | 300 Mesh Copper Grid | N/A |
| Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
| Stock No. | NCZ-GSW-0011 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
| Type | Thickness of the Graphene | Transparency | Support Film |
| 1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
| 2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
| 3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
| 6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |
| Product Name | Graphene On Ultra-Fine 200 Mesh Copper TEM Grids |
| Stock No. | NCZ-GSW-0014 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
| Type | Thickness of the Graphene | Transparency | TEM Grid/AFM Substrate | Support Film |
| 1 Layer | ~0.35 nm | ~96.4% | 200 Mesh Copper Grid | N/A |
| 2 Layers | ~0.7 nm | ~92.7% | 200 Mesh Copper Grid | N/A |
| 3-5 Layers | 1.0-1.7 nm | ~85.8-90.4% | 200 Mesh Copper Grid | N/A |
| 6-8 Layers | 2.1-2.8 nm | ~78.5-83.2% | 200 Mesh Copper Grid | N/A |
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