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Single Crystal Silicon Dioxide Wafer P-Type

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Single Crystal Silicon Dioxide Wafer P-Type

Product Name: Single Crystal Silicon Dioxide Wafer P-Type

Product Name Single Crystal Silicon Dioxide Wafer P-Type
Cat. No. NCZ-NSC 319/20  
Diameter   100 mm +-0.2 mm (4″)  
Oxide Thickness 300 ±20 nm (dry)  
Color Violet  
Thickness 500 ± 20 micron
  Resistivity   1-10 ohm-cm
Type/Dopant P
Orientation <100>

Single Crystal Silicon Dioxide Wafer P-Type (4 inches) Description

Single Crystal Silicon Dioxide Wafer P-Type Nanochemazone® produces Silicon Oxide Wafer with the highest possible density. Our standard wafer size is nominally 25.4 mm (1 inch) to 300 mm (11.8 inches). Materials are produced using crystallization, solid-state, and other ultra-high purification processes such as sublimation.

This process forms a cylindrical ingot which is then sliced and polished to form wafers. Nanochemazone® High Purity (99.999%) Silicon Oxide Wafers- Polished & Unpolished specializes in producing custom compositions for commercial and research applications and new proprietary technologies.

Nanochemazone® also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Silicon as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.

Single Crystal Silicon Dioxide Wafer P-Type (4 inches) RELATED INFORMATION

Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.

Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)

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Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)

Product Name: Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)

Product Name Single Crystal Silicon Wafer
Cat No. NCZ-NSC327/20
Diameter 4 inches
Doping undoped
Thickness 400~415+/-10um
Resistivity 4000 5000 ohms.cm Undoped
Orientation <100>+/-0.5
Polishing one side polished
Application Research Material
Thickness 525 Micron
Resistivity 1-10 ohm-cm
Polished Single side polished
Provided in Single wafer case. Description:

Single Crystal Silicon Wafer thickness Is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depends on the wafer’s crystal orientation since each direction offers distinct paths the transport.

Note: SSP = Single Side Polished, DSP = Double Side Polished, E = Etched, C = AsCut, Material - CZ unless noted, L = Lapped, Und = Undoped (Intrinsic)

Single Crystal Silicon Wafer Intrinsic (2 Inch)

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Single Crystal Silicon Wafer Intrinsic (2 Inch)

Product Name: Single Crystal Silicon Wafer Intrinsic (2 Inch)

Product Name Single Crystal Silicon Wafer Intrinsic (2 Inch)
Cat No. NCZ-NSC328/20
Size 50.8+/- 0.2mm,
Thickness 430+/-10um
Undoped Intrinsic
Resistivity 2000~4000Ω.cm
Orientation <100>+/-0.5°
Polishing One Side Polished
Provided in a single wafer case Description:

Single Crystal Silicon Wafer Intrinsic is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate.

Circular wafers made of silicon are used as a substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices.

As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.

Single crystal silicon wafer Intrinsic (2-inch)

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Single crystal silicon wafer Intrinsic (2-inch)

Product Name: Single crystal silicon wafer Intrinsic (2-inch)

Product Name Single crystal silicon wafer Intrinsic (2-inch)
Cat No. NCZ-NSC329/20
Diameter 2 inch
Doping Intrinsic
Resistivity (>1000ohm/sq.)
Thickness 400µm
Orientation 100
Polished Single side polished
Provided in a Single wafer case: Description:

Single crystal silicon wafer Intrinsic (2-inch) is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as a substrate in most MEMS sensors.

The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices.

As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.

Please email us for the customization. Email: contact@nanochemazone.com Please contact us for customization and price inquiry Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters.

Single Crystal Silicon Wafer N-Type

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Single Crystal Silicon Wafer N-Type (1 inch)

Product Name: Single Crystal Silicon Wafer N-Type (1 inch)

Product Name Single Crystal Silicon Wafer N-Type (1 inch)
Cat No. NCZ-NSC330/20
Size 1 inch
Thickness 300-380 micro-meter
Type N-type
Dopant Phosphorus
Resistivity 1-10 ohm/cm
Surface Single side polished
Boling Point 2355 °C (lit.)
Melting Point 1240 °C,1410 °C (lit.)
Density 2.33 g/mL at 25 °C (lit.)
Semiconductor Properties <100>, N-type
SMILES string [Si]
Physical properties: 0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm. Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″ Description:

Single Crystal Silicon Wafer N-Type (1 inch). We have heated polished doped single-crystal silicon wafers in a single-mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates.

A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry at positions of high magnetic field. This process was conducted in a vacuum to exclude plasma effects.

This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.

Please email us for the customization. Email: contact@nanochemazone.com Please contact us for customization and price inquiry Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters

Single Crystal Silicon Wafer N-Type (3-inch)

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Single Crystal Silicon Wafer N-Type (3-inch)

Product Name: Single Crystal Silicon Wafer N-Type (3-inch)

Product Name Single Crystal Silicon Wafer N-Type (3-inch)
Cat No. NCZ-NSC333/20
Type N
Dia 3 Inch
Doping N-type
Resistivity (1-10 Ohm/sq).
Thickness 290 + 10 µm
Orientation 100
Polished Single side polished
Form crystalline (cubic (a = 5.4037)
Polished wafer (single side polished)
does not contain dopant
Día 2 inch
Thickness 0.5 mm
Boling Point 2355 °C (lit.)
Melting Point 1410 °C (lit.)
Density 2.33 g/mL at 25 °C (lit.)
Semiconductor properties <100>, N-type
SMILES string [Si]
Provided in Single wafer case Description:

Single Crystal Silicon Wafer N-Type (3-inch), Nanochemazone® Supplies provides both standard and customized high-quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high-frequency power devices, just to name a few. Customized crystal growth, precision machining, and coating services are available. Please contact us today to discuss your project requirements.

Please email us for the customization. Email: contact@nanochemazone.com Please contact us for customization and price inquiry Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters.

Single Crystal Silicon Wafer N-type (4-inch)

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Single Crystal Silicon Wafer N-type (4-inch)

Product Name: Single Crystal Silicon Wafer N-type (4-inch)

Product Name Single Crystal Silicon Wafer N-type (4-inch)
Cat No. NCZ-NSC331/20
Día 4 inches
Type N
Diameter (mm) 4” (100.8mm)
Type N-Type
Doping Phosphorous
Crystal Orientation <100>
Surface: Single Side Polished
Thickness 250-500μm
Resistivity 1-10ohm-cm
Crystal method CZ
RRG (%) ≤12
Oxygen Contents (ppm) 12.5-16.5
Carbon Contents (ppm) ≤1
Description:

Silicon (Si) and Silicon on insulator (SOI) wafer resizing. Our resizing process can also be applied to other wafer materials such as glass or GaAs.

Wafer resizing is sometimes referred to as wafer coring, re-sizing, cut down, cut-down, downsizing, down-sizing, size reducing or size reduction. We can accept orders ranging from a single wafer to hundreds of wafers per month. Our process is efficient, innovative, and ESD friendly. Our proprietary process causes less stress to the silicon wafer than other resizing methods. We also round wafer edges to eliminate edge chipping.

We frequently work with 2” (50 mm), 3” (75 mm), 100 mm (4”), 125 mm (5”), 150 mm (6”), 200 mm (8”), and 300 mm wafers; however, we are also capable of producing custom non-standard sizes.

Please email us for the customization. Email: contact@nanochemazone.com Please contact us for customization and price inquiry Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters.

Single Crystal Silicon Wafer P Type 2 Inch

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Single Crystal Silicon Wafer P Type 2 Inch

Product Name: Single Crystal Silicon Wafer P Type 2 Inch
Product Name Single Crystal Silicon Wafer P Type 2 Inch
Cat No. NZC-NSC331/20
Diameter 2 inch  
Doping P-type
Resistivity (1-50 Ohm/sq.)
Thickness 280 + 25 µm
Orientation 100
Polished Single side polished
Provided in a single wafer case

Single crystal silicon wafer P-Type (2 inches) Description:

Nanochemazone® Supplies provides both standard and customized high-quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high-frequency power devices, just to name a few. Customized crystal growth, precision machining, and coating services are available. Please contact us today to discuss your project requirements.

Single crystal silicon wafer P-Type (2 inches) Related Information

Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please contact us for customization and price inquiry Email: contact@nanochemazone.com Note: We supply different size ranges of Nano and micron as per the client’s requirements and Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request

Single Crystal Silicon Wafer P-Type (4 Inch)

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Single Crystal silicon-silicon dioxide Wafer N-type (4 inch)

Product Name Single Crystal Silicon Wafer P-Type (4 Inch)
Cat No. NZC-NSC333/20
MF Si/SiO2
Día 100mm ± 0.5mm (4 inch)
Type/Dopant P  
Orientation <100>  
Wafer thickness 525±25um  
Resistivity 1-10 ohm-cm  
Polished Single side polished  
TTV < 10um  
SiO2 Oxide Thickness 300 nm (dry)
Provided in single wafer box

Crystal silicon-silicon dioxide Wafer N-type (4 inches) Description

Single crystal silicon is the most widely used semiconductor material as a substrate material due to its excellent machinability, mechanical stability, and the potential to combine sensing elements and electronics on the same substrate. Circular wafers made of silicon are used as the substrate in most MEMS sensors. The crystal orientation should be known before manufacturing since silicon has orientation-dependent properties such as piezoresistivity coefficients and etching rates. The common orientation is (100) where the numbers represent Miller indices. As an example, (100) wafer that has a primary flat side as an indication of < 110 > direction. When a piezoresistive element is placed on a (100) wafer, the orientation should be parallel to < 110 > direction if the piezoresistivity coefficients in that direction are intended to be utilized.

Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.

Crystal Silicon dioxide Wafer N-type (4 inches)  RELATED INFORMATION

Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please contact us for customization and price inquiry Email: contact@nanochemazone.com Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.

Single Crystal Silicon Wafer P-type,

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Single Crystal Silicon Wafer P-type,

Product Name Single Crystal Silicon Wafer P-type
Cat No. NCZ-NSC332/20
Día   3 inch  
Diameter 76.2mm ± 0.3mm (3 inches)  
Type P  
Orientation <100>  
Thickness 400±10um  
  Resistivity   1-10 ohm-cm  
  Polished   Single side polished
Provided in a single wafer case

Description:

Nanochemazone® Supplies provides both standard and customized high-quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high-frequency power devices, just to name a few. Customized crystal growth, precision machining, and coating services are available. Please contact us today to discuss your project requirements.

Related Information

Please email us for the customization. Email: contact@nanochemazone.com Please contact us for customization and price inquiry Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in the various parameters. Note: For pricing & ordering information, please contact us at sales@nanochemazone.com Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.

Single Crystal Silicon-Silicon dioxide Wafer

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Single Crystal silicon-silicon dioxide Wafer   

Product Name: Single Crystal silicon-silicon dioxide Wafer   

Product Name Single Crystal silicon-silicon dioxide Wafer P-type (4 inches)
Cat No. NCZ-NSC318/20
Día                      100 mm (4 inches)
Orientation <100>
Wafer thickness 500 micrometer
Resistivity <0.01
Polished          Front Side Polished
 Thickness 300 nm (dry)
Purity 99.9%
Formula Si/SiO2

Single Crystal silicon-silicon dioxide Wafer P-type Description :

Provided in a single wafer case

Silicon oxide wafer SIO2 thin-film among semiconductor technology, SiO2 thin film layers are mainly used as dielectric material and more recently, they are integrated with MEMS (Micro Electro Mechanical Systems) devices. The simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen.

Single Crystal silicon-silicon dioxide Wafer RELATED INFORMATION Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com Note: We supply different size ranges of nano and micron size powder as per the client’s requirements and also accept customization in various parameters.